Hnav tsis kam ntawm cov tshuaj tiv thaiv sintered silicon carbide khoom

Raw khoom thiab formula

Optimize raw khoom particle loj

Xaiv silicon carbide hmoov nrog finer thiab ntau tusyees faib particle loj li raw khoom. Fine-grained silicon carbide hmoov tuaj yeem ua rau thaj tsam ntawm cov tshuaj tiv thaiv, ua rau cov tshuaj tiv thaiv kom tiav, yog li txhim kho qhov ntom ntawm cov khoom. Piv txwv li, tswj qhov nruab nrab particle loj ntawm silicon carbide hmoov nyob rau hauv qhov ntau ntawm 1-5 microns tuaj yeem ua rau cov khoom tsim ib qho kev nruj me ntsis hauv cov txheej txheem sintering, txo qhov porosity, thiab yog li txhim kho hnav tsis kam.

Ntxiv qhov kev txhawb zog theem

Ntxiv qee qhov hardness, high-strength reinforcement cov ntaub ntawv, xws li titanium carbide (TiC), boron carbide (B4C), thiab lwm yam. Cov theem no muaj peev xwm tsim ib tug composite qauv nrog silicon carbide los txhim kho tag nrho cov hardness thiab lub zog ntawm cov khoom. Feem ntau qhov sib ntxiv yog li 5% - 15% (feem ntau), uas tuaj yeem txhim kho qhov hnav tsis kam ntawm cov khoom.

Kev npaj

Ua kom sintering kub thiab siab

Nyob rau hauv tus txheej txheem ntawm cov tshuaj tiv thaiv sintering, tsim nyog nce sintering kub thiab siab tuaj yeem txhawb cov tshuaj tiv thaiv thiab ua rau cov khoom denser. Feem ntau hais lus, nce qhov kub ntawm sintering mus rau 1600-1800 degree thiab lub siab mus rau 2-5MPa tuaj yeem ua rau cov khoom siv silicon carbide sib raug zoo dua, txo qhov pores thiab qhov tsis xws luag, thiab yog li txhim kho hnav tsis kam.

Ntev lub sij hawm sintering

Kev ncua sij hawm sintering kom zoo tuaj yeem ua rau cov tshuaj tiv thaiv kom tiav, xyuas kom tag nrho cov tshuaj tiv thaiv ntawm silicon carbide thiab silicon, thiab tseem pab tshem tawm cov kev ntxhov siab sab hauv. Piv txwv li, ncua lub sij hawm sintering los ntawm cov pa ob peb teev mus rau 10-20 teev tuaj yeem txhim kho qhov ntom thiab sib xws ntawm cov khoom, yog li txhim kho kev hnav tsis kam.

Tom qab ua tiav

Kev kho saum npoo

Kev kho deg ntawm cov tshuaj tiv thaiv-sintered silicon carbide cov khoom, xws li thermal spraying, tshuaj vapor deposition (CVD), thiab lwm yam. Piv txwv li, ib txheej ntawm high-hardness ceramic txheej, xws li txhuas oxide (Al2O3) los yog tungsten carbide (WC) txheej. , yog sprayed rau saum npoo ntawm cov khoom los ntawm thermal spraying tshuab. Cov txheej tuab feem ntau yog nyob nruab nrab ntawm 0.1 - 0.5 hli, uas tuaj yeem txhim kho qhov tawv tawv thiab hnav tsis kam ntawm cov khoom.

Ion implantation

Ion implantation thev naus laus zis yog siv los txhaj qee qhov tawv tawv thiab hnav-tiv taus ions, xws li nitrogen ions (N⁺), boron ions (B⁺), thiab lwm yam, rau hauv cov khoom siv silicon carbide. Qhov tob implantation feem ntau yog nruab nrab ntawm kaum nanometers thiab ntau pua nanometers. Cov ions txhaj tshuaj no tuaj yeem hloov cov tshuaj muaj pes tsawg leeg thiab cov qauv siv lead ua ntawm qhov chaw, txhim kho cov tawv tawv thiab hnav tsis kam ntawm qhov chaw.

Yog tias koj xav paub yuav ua li cas txhawm rau txhim kho qhov hnav tsis kam ntawm cov tshuaj tiv thaiv-sintered silicon carbide cov khoom, koj tuaj yeem tiv tauj Huan Shang thiab peb yuav ua qhov zoo tshaj plaws los pab koj!